| 型号 | 品牌 | 批号 | 封装 | 数量 | 简介 |
|---|---|---|---|---|---|
| BSC440N10NS3 G | INFINEON | 22+ | PowerTDFN-8 | 25000 | PowerTDFN-8 -55°C~150°C(TJ) N-Channel 5300mA(TA),18000mA(TC) 0.044Ω@12000mA,10V 29W(TC) 20V,-20V 100V |
| BSC060P03NS3E G | INFINEON | 22+ | TDSON-8 | 16000 | TDSON-8 30V 100000mA 25V 83W P-Channel -55°C~150°C |
| BSC022N04LS | INFINEON | 22+ | PowerTDFN-8 | 48000 | N-Channel 40V 100000mA(TC) 4.5V,10V 0.0022Ω@50000mA,10V 20V,-20V 2.5W(TA),69W(TC) -55°C~150°C(TJ) PowerTDFN-8 |
| BSC094N06LS5 | INFINEON | 22+ | PowerTDFN-8 | 32000 | PowerTDFN-8 -55°C~150°C(TJ) N-Channel 47000mA(TC) 0.0094Ω@24000mA,10V 36W(TC) 20V,-20V 60V |
| K4U6E3S4AA-MGCR | SAMSUNG | 22+ | BGA | 1280 | LPDDR4X 16Gbit |
| BSS123I | INFINEON | 22+ | TO-236-3,SC-59 | 18000 | TO-236-3,SC-59 -55°C~150°C(TJ) N-Channel 190mA(TA) 6Ω@190mA,10V 0.5W(TA) 20V,-20V 100V |
| K4UBE3D4AA-MGCL | SAMSUNG | 22+ | BGA | 1280 | DRAM Chip Mobile LPDDR4 SDRAM 32Gbit 1Gx32 0.6V/1.1V/1.8V 200-Pin FBGA |
| BSC080N03MS G | INFINEON | 22+ | PowerTDFN-8 | 36000 | PowerTDFN-8 -55°C~150°C(TJ) N-Channel 13000mA(TA),53000mA(TC) 0.008Ω@30000mA,10V 2.5W(TA),35W(TC) 20V,-20V 30V |
| K4UBE3D4AA-MGCR | SAMSUNG | 22+ | BGA | 1280 | LPDDR4X 32Gbit |
| BSC019N04LS | INFINEON | 22+ | TDSON-8 | 30000 | TDSON-8 40V 100000mA 20V 78W N-Channel -55°C~150°C |
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