| 型号 | 品牌 | 批号 | 封装 | 数量 | 简介 |
|---|---|---|---|---|---|
| K4UCE3Q4AA-MGCL | SAMSUNG | 22+ | BGA | LPDDR4X 64Gbit | |
| BSC020N03MS G | INFINEON | 22+ | TDSON-8 | 20000 | TDSON-8 30V 25000mA 20V 96W N-Channel -55°C~150°C |
| K4UCE3Q4AB-MGCL | SAMSUNG | 22+ | BGA | LPDDR4X 64Gbit | |
| BSC015NE2LS5I | INFINEON | 22+ | PowerTDFN-8 | 10000 | PowerTDFN-8 -55°C~150°C(TJ) N-Channel 33000mA(TA),100000mA(TC) 0.0015Ω@30000mA,10V 2.5W(TA),50W(TC) 16V,-16V 25V |
| K4G80325FC-HC25 | SAMSUNG | 22+ | BGA | 1120 | DRAM Chip GDDR5 SDRAM 8Gbit 256Mx32 170-Pin FBGA |
| BSC019N02KS G | INFINEON | 22+ | PowerTDFN-8 | 25000 | PowerTDFN-8 -55°C~150°C(TJ) N-Channel 30000mA(TA),100000mA(TC) 0.00195Ω@50000mA,4.5V 2.8W(TA),104W(TC) 12V,-12V 20V |
| K4Z80325BC-HC14 | SAMSUNG | 22+ | BGA | 1120 | DGPM, IC, MEM, 8GG6, 14GBPS, SMSG |
| BSC030N08NS5 | INFINEON | 22+ | TDSON-8 | 16000 | Power MOSFET |
| K4ZAF325BM-HC14 | SAMSUNG | 22+ | BGA | 6000 | GDDR6 |
| BAT165E6327 | INFINEON | 22+ | SOD-323 | 20000 | SC-76,SOD-323 SCHOTTKY 750mA 40V 740 mV @ 750 mA |
手机:13430992740 
Skype:8888 
QQ号: 2881317224
微信号: yupre2023