型号 |
品牌 |
批号 |
封装 |
数量 |
简介 |
H5ANAG8NAJR-XNC |
HYNIX |
22+ |
BGA |
4800 |
DDR4 2048*8 |
BCR112E6327HTSA1 |
INFINEON |
22+ |
TO-236-3 |
4000 |
TO-236-3, SC-59, SOT-23-3 NPN - Pre-Biased 300mV @ 500µA, 10mA 100nA (ICBO) 20 @ 5mA, 5V 100 mA 50 V |
H9HCNNN8KUMLHR-NME |
HYNIX |
22+ |
BGA |
8000 |
LPDDR4X 256*32 |
BAS170WE6327 |
INFINEON |
22+ |
SOD-323 |
16000 |
Rectifier Diode Schottky Si 0.07A Automotive 2-Pin SOD-323 T/R |
H9HCNNNBKUMLHR-NME |
HYNIX |
22+ |
BGA |
3200 |
LPDDR4X DRAM 512*32 |
BC846SH6327XTSA1 |
INFINEON |
22+ |
6-VSSOP |
18000 |
6-VSSOP, SC-88, SOT-363 2 NPN (Dual) 250mW 100mA 65V 600mV @ 5mA, 100mA 15nA (ICBO) 200 @ 2mA, 5V |
H9HCNNNBKUMLXR-NEE |
HYNIX |
22+ |
BGA |
4800 |
LPDDR4X DRAM 512*32 |
BAT6406WH6327XTSA1 |
INFINEON |
22+ |
SOT-323 |
10000 |
SC-70,SOT-323 SCHOTTKY Small Signal =< 200mA (Io), Any Speed 120mA 40V 750 mV @ 100 mA |
H9HCNNNCPMMLXR-NEE |
HYNIX |
22+ |
BGA |
8000 |
LPDDR4X DRAM 1024*32 |
BAS70-04E6327 |
INFINEON |
22+ |
TO-236-3 |
15000 |
TO-236-3,SC-59,SOT-23-3 SCHOTTKY Small Signal =< 200mA (Io), Any Speed 70mA 70V 1 V @ 15 mA |