型号 |
品牌 |
批号 |
封装 |
数量 |
简介 |
STP100N6F7 |
ST |
22+ |
TO-220-3 |
2500 |
N-Channel 60V 100000mA(TC) 0.0056Ω@50000mA,10V 20V,-20V 125W(TC) -55°C~175°C(TJ) TO-220-3 |
H5TC4G63EFR-PBA |
HYNIX |
22+ |
BGA |
4800 |
4Gb DDR3L SDRAM |
FSBH0170ANY |
ON |
22+ |
DIP-8 |
2500 |
700V Integrated Power Switch for 13Watt offline flyback converters, 100kHz, Brown In/Out Protection |
H5TQ4G83EFR-RDC |
HYNIX |
22+ |
BGA |
3200 |
|
SCS308AHG |
ROHM |
22+ |
TO-220ACP |
2500 |
O-220-2 SIC 8000mA 650V 1.5V@8000mA |
MT47H128M8SH-25E |
MICRON |
22+ |
FBGA-60 |
2 |
1Gb (128M x 8) 400 MHz DRAM 60-FBGA (8x10) Parallel 1.7V ~ 1.9V |
NTP190N65S3HF |
ON |
22+ |
TO-220-3 |
2500 |
N-Channel 650V 20000mA(TC) 10V 0.19Ω@10000mA,10V 30V,-30V 162W(TC) -55°C~150°C(TJ) TO-220-3 |
MT41K256M16TW-107 IT |
MICRON |
22+ |
FBGA96 |
|
4Gb (256M x 16) 933 MHz DRAM 96-FBGA (8x14) Parallel 1.283V ~ 1.45V |
MDF13N65BTH |
MAGNACHIP |
22+ |
TO-220F |
2500 |
Power MOSFET 650V 30V,-30V 36.7W -55°C~150°C |
MT41K256M16TW-107 :P |
MICRON |
22+ |
BGA |
|
4Gb (256M x 16) 933 MHz DRAM 96-FBGA (8x14) Parallel 1.283V ~ 1.45V |