| 型号 | 品牌 | 批号 | 封装 | 数量 | 简介 |
|---|---|---|---|---|---|
| C6D06065A | CREE | 22+ | TO-220-2 | 2500 | TO-220-2 SIC 24000mA 650V 1.5V@6000mA |
| K4B2G0846F-BYMA/BCNB | SAMSUNG | 22+ | FBGA | 1280 | DRAM Chip DDR3L SDRAM 2Gbit 256Mx8 1.35V/1.5V 78-Pin FBGA |
| AOK42S60 | AOS | 22+ | TO-247-3 | 2500 | N-Channel 600V 39000mA(TC) 10V 0.099Ω@21000mA,10V 30V,-30V 417W(TC) -55°C~150°C(TJ) TO-247-3 |
| K4B2G1646F-BYMA/BCNB | SAMSUNG | 22+ | FBGA | 1120 | DRAM Chip DDR3L SDRAM 2Gbit 128Mx16 1.35V/1.5V 96-Pin FBGA |
| STTH2003CT | ST | 22+ | TO-220-3 | 2500 | 300V 10000mA 1.25V@10000mA Fast Recovery =< 500ns, > 200mA (Io) TO-220-3 |
| K4B4G0846E-BYMA/BCNB | SAMSUNG | 22+ | FBGA | 1280 | DRAM Chip DDR3L SDRAM 4Gbit 512Mx8 1.35V/1.5V 78-Pin FBGA |
| LM317LCD | TI | 22+ | 8-SOIC | 2500 | Adjustable 100mA 8-SOIC 32V 1.2V 38V |
| K4B4G1646E-BYK0 | SAMSUNG | 22+ | FBGA | 3360 | DDR3L 256*16 |
| LM2903DR | TI | 22+ | SOP8 | 2500 | CMOS, MOS, Open-Drain, TTL Differential 8-SOIC 2.5mA 0.25µA @ 5V 20mA 2V ~ 36V, ±1V ~ 18V 7mV @ 30V |
| K4B4G1646D-BCK0 | SAMSUNG | 22+ | FBGA | 3360 | SSTL_1.5 1.5V 256*16 DDR3L |
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