| 型号 | 品牌 | 批号 | 封装 | 数量 | 简介 |
|---|---|---|---|---|---|
| FOD3120SD | ON | 22+ | 8-SMD | 2500 | 5000Vrms 60ns，60ns 1.5V 25mA 8-SMD， 15 V ~ 30 V |
| K4A4G165WF-BCTD | SAMSUNG | 22+ | FBGA | 10 | DRAM Chip DDR4 SDRAM 4Gbit 256Mx16 1.2V 96-Pin FBGA |
| PIC18F56K42-I/PT | MICROCHIP | 22+ | 48-TQFP | 2500 | 48-TQFP Exposed Pad 64MHz 4K x 8 FLASH PIC 8-Bit I²C, LINbus, SPI, UART/USART 44 64KB (32K x 16) 1K x 8 2.3V ~ 5.5V |
| K4A8G165WB-BCRC | SAMSUNG | 22+ | FBGA | 1120 | POD 1.2V DDR4 512*16 |
| FSBH0270ANY | ON | 22+ | DIP-8 | 2500 | |
| K4A8G165WC-BCTD | SAMSUNG | 22+ | FBGA | 1120 | POD 1.2V DDR4 512*16 |
| TK28V65W5LQ | TOSHIBA | 22+ | DFN8x8 | 2500 | X35 PB-F POWER MOSFET TRANSISTOR |
| K4A8G165WC-BCWE | SAMSUNG | 22+ | FBGA | DDR4 512*16 | |
| IRFP4332PBF | INFINEON | 22+ | TO-247-3 | 2500 | TO-247-3 -40°C~175°C(TJ) N-Channel 57000mA(TC) 0.033Ω@35000mA,10V 360W(TC) 30V,-30V 250V |
| K4AAG165WA-BCTD | SAMSUNG | 22+ | FBGA | 1120 | POD 1.2V DDR4 1024*16 |
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