| 型号 | 品牌 | 批号 | 封装 | 数量 | 简介 |
|---|---|---|---|---|---|
| FCB110N65F | ON | 22+ | TO-263-3 | 2500 | N-Channel 650V 35000mA(TC) 10V 0.11Ω@17500mA,10V 20V,-20V 357W(TC) -55°C~150°C(TJ) TO-263-3,D²Pak,TO-263AB-2 |
| K4A8G085WC-BCWE | SAMSUNG | 22+ | FBGA | 1280 | DRAM Chip DDR4 SDRAM 8Gbit 1Gx8 1.2V 78-Pin FBGA |
| OPA2171AIDGKR | TI | 22+ | 8-VSSOP | 2500 | Rail-to-Rail General Purpose 475µA (x2 Channels) 3 MHz 8 pA 8-VSSOP 2 35 mA 250 µV |
| K4AAG085WB-BCWE | SAMSUNG | 22+ | BGA | DDR4 2048*8 | |
| LMV824DTBR2G | ON | 22+ | 14-TSSOP | 2500 | 5.6MHz 119nA 1mA 45mA 14-TSSOP 1mV 2.7 V ~ 5.5 V，±1.35 V ~ 2.75 V |
| K4AAG085WA-BCTD | SAMSUNG | 22+ | BGA | DDR4 2048*8 | |
| R8A77965JBG4BG#G9 | RENESAS | 22+ | N/A | 2500 | |
| K4F8E304HB-MGCJ | SAMSUNG | 22+ | BGA | 1280 | SSTL_2 1.1|1.8V LPDDR4 256*32 |
| R8A77965JBG2BG#G9 | RENESAS | 22+ | N/A | 2500 | |
| K4F8E3S4HD-MGCL | SAMSUNG | 22+ | BGA | LPDDR4 256*32 |
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