| 型号 | 品牌 | 批号 | 封装 | 数量 | 简介 |
|---|---|---|---|---|---|
| MT53D1024M32D4DT-053 | MICRON | 21+ | 200-VFBGA | 3000 | 32Gb (1G x 32) 1.866 GHz DRAM 200-VFBGA (10x14.5) 1.1V |
| AD8538AUJZ-REEL7 | ADI | 22+ | TSOT-23-5 | 2000 | Zero-Drift 150µA 430 kHz 15 pA TSOT-23-5 1 25 mA 5 µV |
| MT53D512M32D2DS-053W | MICRON | 21+ | 200-WFBGA | 4000 | 16Gb (512M x 32) 1.866 GHz DRAM 200-WFBGA (10x14.5) 1.1V |
| DS2431P+T&R | MAXIM | 22+ | 6-TSOC | 5000 | 1Kb (256 x 4) EEPROM 6-TSOC 1-Wire® |
| MT53E512M32D4NQ-053 | MICRON | 21+ | FBGA | 5000 | DRAM LPDDR4 16G 512MX32 FBGA QDP |
| LT1121CS8#PBF | ADI | 22+ | 8-SOIC | 6000 | Adjustable 3.75V 30V 150mA 50µA 14mA 8-SOIC 30V |
| MT53E1G32D2NP-046 WT | MICRON | 21+ | 200-WFBGA | 6000 | 32Gb (1G x 32) 2.133 GHz DRAM 200-WFBGA (10x14.5) 1.1V |
| TPS43061RTER | TI | 22+ | 16-WFQFN | 4000 | 16-WFQFN Exposed Pad Transistor Driver 50kHz ~ 1MHz Boost 1 4.5V ~ 38V |
| MT51J256M32HF-80:B | MICRON | 21+ | 170-FBGA | 3000 | 8Gb (256M x 32) 2 GHz RAM 170-FBGA (12x14) Parallel 1.31V ~ 1.39V, 1.46V ~ 1.55V |
| TPS22965NTDSGRQ1 | TI | 22+ | 8-WFDFN | 3000 | General 1 1:1 N channel on/off 2.5 V ~ 5.5 V 4A 8-WFDFN 0.8 V ~ 5.5 V |
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