| 型号 | 品牌 | 批号 | 封装 | 数量 | 简介 |
|---|---|---|---|---|---|
| IPW60R018CFD7 | INFINEON | 22+ | TO-247 | 2500 | TO-247-3 -55°C~150°C(TJ) N-Channel 101000mA(TC) 0.018Ω@58200mA,10V 416W(TC) 20V,-20V 600V |
| K4B4G1646D-BCK0 | SAMSUNG | 22+ | BGA | 5600 | |
| INA139NA/3K | TI | 22+ | SOT-153 | 2500 | 2.7V~40V |
| KLM8G1GETF-B041T06 | SAMSUNG | 22+ | BGA | 3360 | |
| INA210BIDCKR | TI | 22+ | SC-70-6 | 2500 | 1 - 14kHz 28µA 65µA SC-70-6 0.55µV 2.7 V ~ 26 V |
| KLMAG1JETD-B041006 | SAMSUNG | 22+ | BGA-153 | 4480 | |
| STTH1602CT | ST | 22+ | TO-220-3 | 2500 | TO-220-3 Fast Recovery =< 500ns, > 200mA (Io) 10000mA 200V 1.1V@8000mA |
| KLMBG2JETD-B041T09 | SAMSUNG | 22+ | BGA | 5600 | |
| AD820ANZ | ADI | 22+ | 8-PDIP | 2500 | Rail-to-Rail J-FET 700µA 1.8 MHz 2 pA 8-PDIP 1 20 mA 400 µV |
| K4E8E324EB-EGCG000 | SAMSUNG | 22+ | BGA | 6720 |
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